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| IL256A EW FEATURES * Guranteed CTR Symmetry, 2:1 Maximum * Bidirectional AC Input Industry Standard SOIC-8 Surface * Mountable Package * Standard Lead Spacing, .05" * Available in Tape and Reel Option (Conforms to EIA Standard RS481A) DESCRIPTION The IL256A is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector. These circuit elements are constructed with a standard SOIC-8 foot print. The product is well suited for telecom applications such as ring detection or off/on hook status, given its bidirectional LED input and guaranteed current transfer ratio (CTR) minimum of 20% at IF= 10 mA. Maximum Ratings Emitter Continuous Forward Current......................... 60 mA Power Dissipation at 25C ........................... 90 mW Derate Linearly from 25C ..................... 0.8 mW/C Detector Collector-Emitter Breakdown Voltage .............. 30 V Emitter-Collector Breakdown Voltage ................ 5 V Collector-Base Breakdown Voltage ................. 70 V Power Dissipation ..................................... 150 mW Derate Linearly from 25C ..................... 2.0 mW/C Package Total Package Dissipation at 25C Ambient (LED + Detector).................................... 240 mW Derate Linearly from 25C ..................... 3.1 mW/C Storage Temperature .................. -55C to +150C Operating Temperature ............... -55C to +100C Soldering Time at 260C..............................10 sec. N AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Dimensions in inches (mm) .120.005 (3.05.13) .240 (6.10) Pin One ID .192.005 (4.88.13) .004 (.10) .008 (.20) .050 (1.27) typ. .021 (.53) Anode/ Cathode Cathode/ Anode NC NC 1 2 3 4 8 7 6 5 C L .154.005 (3.91.13) .016 (.41) NC Base Collector Emitter .015.002 (.38.05) .008 (.20) 40 7 .058.005 (1.49.13) .125.005 (3.18.13) Lead Coplanarity .0015 (.04) max. 5 max. R.010 (.25) max. .020.004 (.15.10) 2 plcs. Characteristics (TA=25C) Symbol Emitter Forward Voltage Detector Breakdown Voltage Collector-Emitter Emitter-Collector Collector Base Leakage Current, Collector-Emitter Package DC Current Transfer Ratio Symmetry CTR at +10mA CTR 20 0.5 1.0 2.0 % IF= 10 mA, VCE=5 V BVCEO BVECO BVCBO ICEO 30 5 70 50 10 90 5 50 V V V nA IC=1 mA IE=100 A IC=100 A VCE=10 V VF 1.2 1.5 V IF= 10 mA Min. Typ. Max. Unit Condition CTR at -10 mA Saturation Voltage, Collector-Emitter Isolation Voltage, Input to Output VCEsat VIO 2500 0.4 VACRMS IF= 16 mA, IC=2 mA 5-1 Figure 1. LED forward current versus forward voltage IF - LED Forward Current - mA Figure 5. Normalized saturated CTR 1.0 Ta = 25C Ta = 50C Ta = 70C Ta = 100C Vce(sat) = 0.4V 60 0.8 85C 25C 20 0 -55C -20 -40 -60 -1.5 -1.0 -0.5 0.0 0.5 1.0 VF - LED Forward Voltage - V 1.5 Normalized CTR 40 0.6 0.4 Normalized to: 0.2 If = 10 mA. Vce =10V Ta = 25C 0.0 .1 1 10 If - LED Current - mA 100 Figure 2. Forward voltage versus forward current 1.4 Figure 6. Normalized CTRcb 1.5 Normalized to: If=10mA, Ta=25C Vf-Forward Voltage - V 1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1 Ta = -55C Normalized CTRcb 1.0 Ta = 25C 0.5 Ta = 100C 0.0 25C 50C 70C .1 1 10 100 If - Forward Current - mA 1 10 100 If - LED Current -mA Figure 3. Peak LED current versus duty factor, Tau 10000 If(pk) - Peak LED Current - mA Duty Factor Figure 7. Photocurrent versus LED current 1000 Icb - Photocurrent - A 1000 .005 .01 .02 .05 .1 .2 100 t DF = /t 10 25C 70C 1 100 .5 10 10-6 .1 10-5 10-4 10-3 10-2 10-1 10 0 10 1 .1 1 10 100 t - LED Pulse Duration - s If - LED Current - mA Figure 4. Normalized CTR versus If and Ta 2.0 Normalized to : 1.5 Ta = 25C Ta = 50C Ta = 70C Ta = 100C If = 10 mA, Vce =10V Figure 8. Base current versus If and HFE 700 Vce=0.4V, Ta=25C 600 HFE - Transistor Gain 100 Normalized CTR Ta = 25C 1.0 400 300 200 1 0.5 0.0 .1 1 10 100 If - LED Current - mA 100 1 10 100 Ib - Base Current - A .1 1000 If- LED Current-mA 500 10 IL256A 5-2 Figure 9. Normalized HFE versus Ib, Ta 1.2 Normalized to: Ib = 10A Figure 11. Base emitter voltage versus base current 1000 100 Normalized HFE 1.0 Ta = 25C Vce = 10V Ib - Base Current - A Ta = 25C 10 1 .1 .01 .001 0.4 0.8 NHFE -20C NHFE 25C NHFE 50C NHFE 70C 0.6 0.4 1 10 100 Ib - Base Current - A 1000 0.5 0.6 0.7 0.8 Vbe - Base Emitter Voltage - V Figure 10. Normalized saturated HFE versus Ib 1.5 Normalized to: Normalized Saturated HFE HFE at Vce = 10V, Icb = 10A Ta = 25C 1.0 Ta = -20C Ta =25C Ta = 50C Ta = 70C Vce(sat) = 0.4V Figure 12. Collector-emitter leakage current versus temperature Iceo - Collector-Emitter - nA 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 Vce = 10V TYPICAL 0.5 0.0 1 10 100 1000 Ib - Base Current - A 10 -2 -20 Ta - Ambient Temperature - C 0 20 40 60 80 100 IL256A 5-3 |
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